A Novel Solution to the Dynamic Routing and Wavelength Assignment Problem in Transparent Optical Networks

We present an evolutionary programming algorithm for solving the dynamic routing and wavelength assignment (DRWA) problem in optical wavelength-division multiplexing (WDM) networks under wavelength continuity constraint. We assume an ideal physical channel and therefore neglect the blocking of connection requests due to the physical impairments. The problem formulation includes suitable constraints that enable the algorithm to balance the load among the individuals and thus results in a lower blocking probability and lower mean execution time than the existing bio-inspired algorithms available in the literature for the DRWA problems. Three types of wavelength assignment techniques, such as First fit, Random, and Round Robin wavelength assignment techniques have been investigated here. The ability to guarantee both low blocking probability without any wavelength converters and small delay makes the improved algorithm very attractive for current optical switching networks.Comment: 12 Pages, IJCNC Journal 201

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111) /Si (111) heterostructures

Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd2O3/Si(111) substrates is reported, along with a systematic investigation of the evolution of Ge growth, and structural defects in the grown epilayer. While Ge growth begins in the Volmer-Weber growth mode, the resultant islands coalesce within the first 10 nm of growth, beyond which a smooth two-dimensional surface evolves. Coalescence of the initially formed islands results in formation of rotation and reflection microtwins, which constitute a volume fraction of less than 1 %. It is also observed that while the stacking sequence of the (111) planes in the Ge epilayer is similar to that of the Si substrate, the (111) planes of the Gd2O3 epilayer are rotated by 180 degree about the [111] direction. In metal-semiconductor-metal schottky photodiodes fabricated with these all-epitaxial Ge-on-insulator (GeOI) samples, significant suppression of dark current is observed due to the presence of the Gd2O3 epilayer. These results are promising for application of these GeOI structures as virtual substrates, or for realization of high-speed group-IV photonic components.Comment: 15 pages, 6 figure